ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SIXN1-X

被引:49
作者
DUNNETT, B
JONES, DI
STEWART, AD
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 53卷 / 02期
关键词
D O I
10.1080/13642818608238982
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:159 / 169
页数:11
相关论文
共 17 条
[1]   PHOTOELECTRONIC PROPERTIES OF AMORPHOUS-SILICON NITRIDE COMPOUNDS [J].
ALVAREZ, F ;
CHAMBOULEYRON, I .
SOLAR ENERGY MATERIALS, 1984, 10 (02) :151-170
[2]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[3]   TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON [J].
BEYER, W ;
FISCHER, R ;
OVERHOF, H .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03) :205-217
[4]   2-PHASE STRUCTURE OF A-SI1-XNX-H FABRICATED BY MICROWAVE GLOW-DISCHARGE TECHNIQUE [J].
CHAYAHARA, A ;
UEDA, M ;
HAMASAKI, T ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (01) :19-23
[5]   PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS [J].
IBARAKI, N ;
FRITZSCHE, H .
PHYSICAL REVIEW B, 1984, 30 (10) :5791-5799
[6]   ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J].
KARCHER, R ;
LEY, L ;
JOHNSON, RL .
PHYSICAL REVIEW B, 1984, 30 (04) :1896-1910
[7]   WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H [J].
KURATA, H ;
HIROSE, M ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L811-L813
[8]   ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].
LECOMBER, PG ;
SPEAR, WE .
PHYSICAL REVIEW LETTERS, 1970, 25 (08) :509-&
[9]   AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].
LECOMBER, PG ;
SPEAR, WE ;
GHAITH, A .
ELECTRONICS LETTERS, 1979, 15 (06) :179-181
[10]   ANOMALOUS VARIATIONS IN CONDUCTIVITY OF A-SI - H WITH NITROGEN DOPING [J].
NOGUCHI, T ;
USUI, S ;
SAWADA, A ;
KANOH, Y ;
KIKUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L485-L487