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PHOTOELECTRONIC PROPERTIES OF AMORPHOUS-SILICON NITRIDE COMPOUNDS
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SOLAR ENERGY MATERIALS,
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ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE
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PHILOSOPHICAL MAGAZINE,
1977, 35 (01)
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TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON
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PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1979, 39 (03)
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2-PHASE STRUCTURE OF A-SI1-XNX-H FABRICATED BY MICROWAVE GLOW-DISCHARGE TECHNIQUE
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1985, 24 (01)
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PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS
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PHYSICAL REVIEW B,
1984, 30 (10)
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ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY
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PHYSICAL REVIEW B,
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ANOMALOUS VARIATIONS IN CONDUCTIVITY OF A-SI - H WITH NITROGEN DOPING
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1982, 21 (08)
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