ON THE INTRINSIC BISTABILITY IN RESONANT TUNNELING STRUCTURES - OBSERVATION OF AREA AND TEMPERATURE-DEPENDENCE OF HYSTERESIS

被引：5

作者：

CHEN, JG ^{[1
]}

CHEN, J ^{[1
]}

WILSON, RA ^{[1
]}

JOHNSON, W ^{[1
]}

YANG, CH ^{[1
]}

机构：

[1] LAB PHYS SCI,COLLEGE PK,MD 20742

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.349404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report experimental observation on the area and temperature dependence of the hysteresis in the current-voltage characteristics of double-barrier resonant tunneling diodes. Our observation shows that the hysteresis can simply result from a load line effect, since (1) the hysteresis will disappear when the the device area is reduced, and (2) the hysteresis becomes wider at lower temperatures. We compare the data with theoretical predictions from the intrinsic bistability picture, and obtain the criterion for observing current bistability.

引用

页码：2473 / 2475

页数：3

共 14 条

[1] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES
ALVES, ES
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[2] ON THE INTRINSIC BISTABILITY IN RESONANT TUNNELING STRUCTURES - OBSERVATION OF AREA DEPENDENCE OF HYSTERESIS
CHEN, JG
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[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (02) : 168 - 176
[9] SHEARD FW, 1988, APPL PHYS LETT, V52, P1226
[10] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT
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