共 18 条
- [1] TEMPERATURE DEPENDENCES OF THE DIELECTRIC-PROPERTIES AND BAND-STRUCTURE PARAMETERS OF PB1-XSNXSE SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (07): : 839 - 840
- [2] INFLUENCE OF BAND CROSSING UPON ELECTRIC PROPERTIES OF PB1-XSNXSE BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (11): : 1378 - &
- [3] INVESTIGATION OF THE INFLUENCE OF IRRADIATION WITH FAST ELECTRONS ON ELECTROPHYSICAL PROPERTIES OF PB1-XSNXSE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (01): : 31 - 33
- [4] INFLUENCE OF BISMUTH IMPURITIES ON THE DENSITY OF FREE-CARRIERS IN PB1-XSNXTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (05): : 570 - 571
- [6] INFLUENCE OF PRESSURE ON ELECTROPHYSICAL PROPERTIES OF THE INSULATING PHASE OF ELECTRON-IRRADIATED PB1-XSNXSE (X=0.25) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 63 - 65
- [7] TEMPERATURE DEPENDENCES OF THE DIELECTRIC PROPERTIES AND BAND STRUCTURE PARAMETERS OF Pb1 - xSnxSe SOLID SOLUTIONS. Soviet physics. Semiconductors, 1983, 17 (07): : 839 - 840
- [8] PRESSURE AND TEMPERATURE DEPENDENCES OF DIELECTRIC-PROPERTIES OF PB(MG1/2W1/2)O3 JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (07): : 1055 - 1063