EFFECTS OF SURFACE-STATES AND OF EXCITATION ON BARRIER HEIGHTS IN A SIMPLE-MODEL OF A GRAIN-BOUNDARY OR A SURFACE

被引:26
作者
LANDSBERG, PT
ABRAHAMS, MS
机构
[1] Department of Electrical Engineering, University of Florida, Gainesville
关键词
D O I
10.1063/1.333038
中图分类号
O59 [应用物理学];
学科分类号
摘要
The model of a grain boundary (or of a surface) used here employs parallel quasi-Fermi levels but does not require the depletion approximation. Shockley-Read-Hall recombination via the surface states (including Auger effects) is utilized and the resulting surface trap occupation is displayed as a generalization of the well-known Fermi-Dirac distribution function. This enables one to cover equilibrium and steady-state conditions in one treatment. The barrier height has been given as a function of bulk doping, surface energy level density, and also as a function of excitation intensity. The latter is determined by the separation between the quasi-Fermi levels and can be due to incident light or carrier injection. A number of experimental curves have been fitted satisfactorily on the basis of the theory. Among the conclusions, we note that there is a maximum (with respect to doping) in the barrier height, and that illumination reduces the barrier height. The effect of the energetic position of the surface states is also traced here.
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页码:4284 / 4293
页数:10
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