ORDERING OF AL0.5GA0.5P BY HIGH-ENERGY ELECTRON-IRRADIATION

被引：5
|
作者：
WADA, T
MAEDA, Y
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期
关键词：
D O I：
10.1063/1.99922
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1596 / 1598
页数：3
相关论文
共 50 条
  • [31] HIGH G(M)IN(0.5)AL(0.5)AS/IN0.5GA0.5AS HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN LATTICE-MISMATCHED ON GAAS SUBSTRATES
    MISHIMA, T
    HIGUCHI, K
    MORI, M
    KUDO, M
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1230 - 1235
  • [32] Two-dimensional electron gas at Ga0.5In0.5P/GaAs heterointerface spontaneously induced by atomic ordering
    Yamashita, K
    Kita, T
    Wada, O
    Wang, Y
    Murase, K
    Geng, C
    Scholz, F
    Schweizer, H
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 329 - 332
  • [33] CHANGES IN AC CONDUCTIVITY OF SILICON WITH ELECTRON-IRRADIATION AT 0.5K
    GWOZDZ, PS
    KOEHLER, JS
    PHYSICAL REVIEW B, 1972, 6 (12): : 4571 - 4574
  • [34] CHANGES IN AC CONDUCTIVITY OF SILICON WITH ELECTRON-IRRADIATION AT 0.5 DEGREES K
    GWOZDZ, PS
    KOEHLER, JS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 307 - &
  • [35] The effects of electron irradiation on triple-junction Ga0.5In0.5P/GaAs/Ge solar cells
    Cotal, HL
    King, RR
    Haddad, M
    Ermer, JH
    Karam, NH
    Krut, DD
    Joslin, DE
    Takahashi, M
    Cavicchi, BT
    CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, : 1316 - 1319
  • [36] P-CHANNEL GA0.5AL0.5AS/GAAS MODFETS
    WANG, WI
    TIWARI, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1968 - 1969
  • [37] ELECTRONIC-STRUCTURE AND DENSITY OF STATES OF THE RANDOM AL0.5GA0.5AS, GAAS0.5P0.5, AND GA0.5IN0.5AS SEMICONDUCTOR ALLOYS
    MAGRI, R
    FROYEN, S
    ZUNGER, A
    PHYSICAL REVIEW B, 1991, 44 (15): : 7947 - 7964
  • [38] Negative and persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructures under uniaxial stress
    Kraak, W
    Minina, N
    Savin, AM
    Spangenberg, T
    Hansen, OP
    Sorensen, CB
    HIGH PRESSURE RESEARCH, 2000, 18 (1-6) : 57 - 62
  • [39] ORDERING EFFECTS IN MOCVD GROWN GA0.5IN0.5P ON MISORIENTED (100) GAAS
    HSU, SN
    LIN, JF
    JOU, MJ
    CHEN, CY
    LEE, BJ
    MATERIALS CHEMISTRY AND PHYSICS, 1994, 38 (01) : 50 - 54
  • [40] Effect of Te doping on electron traps in In0.5Ga0.5P
    Krutogolov, YK
    Kunakin, YI
    Matyash, AA
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (11) : 645 - 648
12345