OXIDATION OF SI SURFACES

被引：24

作者：

HAAS, GA ^{[1
]}

GRAY, HF ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.322133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3885 / 3887

页数：3

共 24 条

[1] ADSORPTION OF VARIOUS GASES ON CLEAN AND OXIDIZED GE SURFACES [J].

BOONSTRA, AH ;

VANRULER, J .

SURFACE SCIENCE, 1966, 4 (02) :141-&

[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[3] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205

[4] THERMAL OXIDATION OF HEAVILY DOPED SILICON [J].

DEAL, BE ;

SKLAR, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :430-+

[5] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .2. [J].

DORN, R ;

LUTH, H ;

IBACH, H .

SURFACE SCIENCE, 1974, 42 (02) :583-594

[6]

EVITS HC, 1962, ELECTRONICS SEMICOND

[7] RATES OF FORMATION OF THERMAL OXIDES OF SILICON [J].

EVITTS, HC ;

COOPER, HW ;

FLASCHEN, SS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) :688-690

[8] FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON [J].

FEHLNER, FP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) :1723-+

[9] THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON [J].

GOODMAN, AM ;

BREECE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :982-&

[10] CHEMICAL EFFECTS IN AUGER-ELECTRON SPECTROSCOPY [J].

HAAS, TW ;

GRANT, JT ;

DOOLEY, GJ .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1853-&

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