共 50 条
- [1] FORBIDDEN-BAND WIDTH OF SOME SOLID SOLUTIONS BASED ON PBTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 890 - &
- [2] MAGNETIC-SUSCEPTIBILITY AND FORBIDDEN BAND WIDTH OF INAS-GAP SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1445 - 1447
- [3] NATURE OF CHANGE IN FORBIDDEN-BAND WIDTH IN SUBSTITUTIONAL SOLID-SOLUTIONS BASED ON LEAD CHALCOGENIDES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 259 - 259
- [4] DEPENDENCE OF FORBIDDEN-BAND WIDTH ON COMPOSITION OF ALXGA1-XSB SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 913 - 915
- [5] DEPENDENCE OF FORBIDDEN BAND WIDTH OF BI-SB SEMICONDUCTING SOLID-SOLUTIONS ON ANTIMONY CONCENTRATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (12): : 1332 - 1334
- [6] DETERMINATION OF FORBIDDEN BAND WIDTH OF GE-SI SOLID-SOLUTIONS AT HIGH-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 2093 - &
- [7] TEMPERATURE-DEPENDENCE OF FORBIDDEN BAND WIDTH OF IN1-XGAXP SOLID-SOLUTIONS WITH X =] 0.5 SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 590 - 591
- [9] INFLUENCE OF COMPOSITION OF PBSE1-XSX SOLID-SOLUTIONS ON THE POSITION AND WIDTH OF A THALLIUM IMPURITY BAND SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (06): : 628 - 630
- [10] TEMPERATURE-DEPENDENCE OF WIDTH OF A DIRECT FORBIDDEN BAND OF AL-XGA-1-XAS SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 656 - 657