A NOVEL SURFACE RECONSTRUCTION - SUBSURFACE INTERSTITIALS STABILIZE SI(113)3X2

被引:36
作者
DABROWSKI, J
MUSSIG, HJ
WOLFF, G
机构
[1] Institut für Halbleiterphysik, D-15204 Frankfurt (Oder)
关键词
DENSITY FUNCTIONAL CALCULATIONS; LOW INDEX SINGLE CRYSTAL SURFACES; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE ENERGY; SURFACE RELAXATION AND RECONSTRUCTION;
D O I
10.1016/0039-6028(95)00168-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Si(113) is of potential technological interest because it is thermally stable and appears to be a promising substrate for heteroepitaxy. However, existing models of its atomic structure do not agree with experimental findings. We present a new model of Si(113) which is based on a novel idea of a subsurface self-interstitial. Guided by STM measurements and ab-initio calculations we find a structure which is stable, reproduces STM images, and allows for the observed transitions between 3 x 2 and 3 x 1 phases. Moreover, we show that a careful energy optimization of atomic positions is needed for a reliable interpretation of STM images.
引用
收藏
页码:1022 / 1027
页数:6
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