MASSES OF QUANTUM-SIZE HOLE SUBBANDS OF SEMICONDUCTOR HETEROSTRUCTURES WITH DIFFERENT ORIENTATIONS

Analytic expressions have been obtained for the effective masses in quantum-size hole subbands of heterostructure semiconductors with a degenerate valence band. Corrugation of the hole spectrum in stressed quantum layers of different orientations is taken into account. The dependence of the subband dispersion on the direction of growth of a heterostructure, on the jump of the valence band edge at the heterojunction, on the layer thickness, and on the strains in the layers has been analyzed. The effect of corruptions and strains on the behavior of the subband masses near a semiconductor-semimetal-semiconductor transition in CdTe-HgTe heterostructures has been determined.