IODIDE ION-SENSITIVE FIELD-EFFECT STRUCTURES

被引：6
|
作者：
SCHONING, MJ [1 ]
BRUNS, M [1 ]
HOFFMANN, W [1 ]
HOFFMANN, B [1 ]
ACHE, HJ [1 ]
机构：
[1] UNIV KARLSRUHE,INST TECHNOL ELEKTROTECH,W-7500 KARLSRUHE 21,GERMANY
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1993年 / 15卷 / 1-3期
关键词：
D O I：
10.1016/0925-4005(93)85049-G
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
A new ion-selective thin-film membrane for ion-sensitive field-effect structures has been realized. Silver iodide (AgI) as an iodide-sensitive material has been vacuum evaporated onto semiconductor-insulator substrates. Various preconditioning and vacuum evaporation parameters as well as post treatment conditions were tested. Sensitivity and selectivity of these model field-effect structures were investigated by capacitance-voltage (CV) measurements. Nernstian behaviour, good selectivity and a high lifetime comparable with that of the ion-selective electrode (ISE) could be obtained. This method of membrane fabrication is expected to be suitable for the large scale manufacture of sensor chips.
引用
收藏
页码：192 / 194
页数：3
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