ASEP - A CAD PROGRAM FOR SILICON ANISOTROPIC ETCHING

被引：30

作者：

BUSER, RA

DEROOIJ, NF

机构：

[1] Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1991年 / 28卷 / 01期

关键词：

D O I：

10.1016/0924-4247(91)80009-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A computer program is described which simulates silicon single-crystal etching in KOH. Starting from a 2-D mask layout, the program finds the relevant etching planes and delivers a 3-D output of the etched structure with the etch time (or etch depth) as parameter. The resulting output plot is compared with realized test structures.

引用

页码：71 / 78

页数：8

共 9 条

[1] VERY HIGH Q-FACTOR RESONATORS IN MONOCRYSTALLINE SILICON
BUSER, RA
DEROOIJ, NF
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) : 323 - 327
[2] BUSER RA, 1988, 6TH P EUR FIBR OPT C, P223
[3] BUSER RA, 1986, OCT FALL M EL SOC SA, P879
[4] BUSER RA, 1989, THESIS U NEUCHATAL S
[5] KOPPELMAN GM, 1989, IEEE MEMS WORKSHOP S, P88
[6] LEE KW, 1982, IEEE T ELECTRON DEV, V29, P34
[7] SATO K, 1989, JIEE TECH M MICROMAC, P19
[8] SEQUIN CH, 1989, NOV P USENIX COMP GR
[9] 1989, IMT235IC0189 INT REP

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