ASEP - A CAD PROGRAM FOR SILICON ANISOTROPIC ETCHING

被引：30

作者：

BUSER, RA

DEROOIJ, NF

机构：

[1] Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1991年 / 28卷 / 01期

关键词：

D O I：

10.1016/0924-4247(91)80009-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A computer program is described which simulates silicon single-crystal etching in KOH. Starting from a 2-D mask layout, the program finds the relevant etching planes and delivers a 3-D output of the etched structure with the etch time (or etch depth) as parameter. The resulting output plot is compared with realized test structures.

引用

页码：71 / 78

页数：8

共 9 条

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BUSER, RA ;

DEROOIJ, NF .

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[2]

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[3]

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[4]

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[5]

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[6]

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[8]

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[9]

1989, IMT235IC0189 INT REP

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