INFLUENCE OF THE BARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS ALGAAS QUANTUM WELL LASERS

被引：35

作者：

BLOOD, P ^{[1
]}

FLETCHER, ED ^{[1
]}

WOODBRIDGE, K ^{[1
]}

HEASMAN, KC ^{[1
]}

ADAMS, AR ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1459 / 1468

页数：10

共 30 条

[21] PRESSURE-DEPENDENCE OF THRESHOLD CURRENT IN GAXIN1-XASYP1-Y LASERS [J].

PATEL, D ;

ADAMS, AR ;

GREENE, PD ;

HENSHALL, GD .

ELECTRONICS LETTERS, 1982, 18 (12) :527-528

[22] THE K.P INTERACTION IN INP AND GAAS FROM THE BAND-GAP DEPENDENCE OF THE EFFECTIVE MASS [J].

SHANTHARAMA, LG ;

ADAMS, AR ;

AHMAD, CN ;

NICHOLAS, RJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (25) :4429-4442

[23] THRESHOLD CURRENTS FOR ALGAAS QUANTUM WELL LASERS [J].

SUGIMURA, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (04) :336-343

[24] EFFECT OF AUGER RECOMBINATION ON LASER OPERATION IN GA1-XALXAS [J].

TAKESHIMA, M .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) :3846-3850

[25]

THOOFT GW, 1983, ACTA ELECTRON, V25, P193

[26]

THOOFT GW, 1988, SUPERLATTICE MICROST, V1, P307

[27] GAAS-ALGAAS MQW AND GRINSCH LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WEIMANN, G ;

SCHLAPP, W .

PHYSICA B & C, 1985, 129 (1-3) :459-464

[28]

WOLFORD DJ, 1984, I PHYS C SER, V74, P275

[29] SHORT WAVELENGTH (VISIBLE) GAAS QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WOODBRIDGE, K ;

BLOOD, P ;

FLETCHER, ED ;

HULYER, PJ .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :16-18

[30] SYSTEMATICS OF LASER OPERATION IN GAAS/ALGAAS MULTIQUANTUM WELL HETEROSTRUCTURES [J].

ZIELINSKI, E ;

SCHWEIZER, H ;

HAUSSER, S ;

STUBER, R ;

PILKUHN, MH ;

WEIMANN, G .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :969-976

← 1 2 3 →