SODIUM PASSIVATION IN HCL OXIDE-FILMS ON SI

被引：38

作者：

ROHATGI, A

BUTLER, SR

FEIGL, FJ

KRANER, HW

JONES, KW

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

[2] BROOKHAVEN NATL LAB,UPTON,NY 11973

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 02期

关键词：

D O I：

10.1063/1.89305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：104 / 106

页数：3

共 11 条

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[2]

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[9] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

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[10] PROPERTIES OF SIO2 GROWN IN PRESENCE OF HCL OR C-12 [J].

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