THE PRODUCTION OF EPITAXIAL LAYERS OF SILICON BY ION-BEAM SPUTTERING

被引：1

作者：

SCHWEBEL, C

MEYER, F

GAUTHERIN, G

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982557

中图分类号：

学科分类号：

摘要：

引用

页码：473 / 479

页数：7

共 10 条

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