DIRECT OBSERVATION OF AN ENHANCED CONCENTRATION OF THE PRINCIPAL DEEP LEVEL EL2 AT SINGLE DISLOCATIONS

被引：25

作者：

STIRLAND, DJ

BROZEL, MR

GRANT, I

机构：

[1] TRENT POLYTECH,DEPT ELECT & ELECTR ENGN,NOTTINGHAM NG1 4BU,ENGLAND

[2] CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 11期

关键词：

D O I：

10.1063/1.95762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1066 / 1068

页数：3

相关论文

共 16 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] DIRECT OBSERVATION OF FINE-STRUCTURE IN THE CONCENTRATION OF THE DEEP DONOR [EL2] AND ITS CORRELATION WITH DISLOCATIONS IN UNDOPED, SEMI-INSULATING GAAS
BROZEL, MR
GRANT, I
WARE, RM
STIRLAND, DJ
SKOLNICK, MS
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1109 - 1118
[3] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS
BROZEL, MR
GRANT, I
WARE, RM
STIRLAND, DJ
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 610 - 612
[4] BROZEL MR, 1984, UNPUB 11TH INT S GAA
[5] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL
CULLIS, AG
AUGUSTUS, PD
STIRLAND, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2556 - 2560
[6] FOULKES EJ, 1984, 3RD INT C SEM 3 5 CO, P160
[7] FSGO POINT-CHARGE MODELS - THEIR ACCURACY AND EXTENSION TO HIGHER GAUSSIANS
MARTIN, D
HALL, GG
[J]. THEORETICA CHIMICA ACTA, 1981, 59 (03): : 281 - 290
[8] MARTIN GM, 1984, UNPUB 11TH INT S GAA
[9] PHOTOINDUCED QUENCHING OF INFRARED-ABSORPTION NONUNIFORMITIES OF LARGE DIAMETER GAAS CRYSTALS
SKOLNICK, MS
REED, LJ
PITT, AD
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 447 - 449
[10] SKOLNICK MS, 1984, 3RD INT C SEM 3 5 CO, P446