TRANSPARENT METAL-OXIDE ELECTRODE CID IMAGER

被引：16

作者：

BROWN, DM ^{[1
]}

GHEZZO, M ^{[1
]}

GARFINKEL, M ^{[1
]}

机构：

[1] GE,CORPORATE RES & DEV CTR,SCHENECTADY,NY 12301

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 01期

关键词：

D O I：

10.1109/JSSC.1976.1050687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：128 / 132

页数：5

共 9 条

[1]

BROWN DM, 1975, FEB ISSCC DIG TECH P, P34

[2] QUANTUM EFFICIENCY OF A SILICON GATE CHARGE-COUPLED OPTICAL IMAGING ARRAY [J].

BROWN, RW ;

CHAMBERLAIN, SG .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :675-685

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[4]

MICHON GJ, 1973, FEB INT SOL STAT CIR, P138

[5] ELECTRICAL AND OPTICAL PROPERTIES OF SPUTTERED IN2O3 FILMS .I. ELECTRICAL PROPERTIES AND INTRINSIC ABSORPTION [J].

MULLER, HK .

PHYSICA STATUS SOLIDI, 1968, 27 (02) :723-&

[6] INFLUENCE OF OXIDE LAYERS ON DETERMINATION OF OPTICAL PROPERTIES OF SILICON [J].

PHILIPP, HR .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2835-&

[7] CHARGE-COUPLED AREA IMAGE SENSOR USING 3 LEVELS OF POLYSILICON [J].

SEQUIN, CH ;

MORRIS, FJ ;

SHANKOFF, TA ;

TOMPSETT, MF ;

ZIMANY, EJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) :712-720

[8] CHARACTERISTICS OF THINNED BACKSIDE-ILLUMINATED CHARGE-COUPLED DEVICE IMAGERS [J].

SHORTES, SR ;

CHAN, WW ;

RHINES, WC ;

BARTON, JB ;

COLLINS, DR .

APPLIED PHYSICS LETTERS, 1974, 24 (11) :565-567

[9]

VOSSEN JL, 1971, RCA REV, V32, P289

← 1 →