MODELING FREQUENCY-DEPENDENCE OF OUTPUT IMPEDANCE OF A MICROWAVE MESFET AT LOW-FREQUENCIES

被引:92
作者
CAMACHOPENALOSA, C
AITCHISON, CS
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D O I
10.1049/el:19850373
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:528 / 529
页数:2
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共 6 条
[1]   THEORY AND ANALYSIS OF GAAS-MESFET MIXERS [J].
MAAS, SA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (10) :1402-1406
[2]   MODELING THE MESFET OUTPUT NONLINEARITY [J].
MINASIAN, RA .
ELECTRONICS LETTERS, 1979, 15 (17) :515-516
[3]  
MO DL, 1970, IEEE T ELECTRON DEV, VED17, P577
[4]   A GAAS-FET MODEL FOR LARGE-SIGNAL APPLICATIONS [J].
PETERSON, DL ;
PAVIO, AM ;
KIM, B .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) :276-281
[5]   SIMULATION OF NON-LINEAR MICROWAVE FET PERFORMANCE USING A QUASI-STATIC MODEL [J].
RAUSCHER, C ;
WILLING, HA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (10) :834-840
[6]   GAAS-FET LARGE-SIGNAL MODEL AND ITS APPLICATION TO CIRCUIT DESIGNS [J].
TAJIMA, Y ;
WRONA, B ;
MISHIMA, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :171-175