MONOLITHIC INTEGRATION OF SURGE PROTECTION DIODES INTO LOW-NOISE GAAS-MESFETS

被引：1

作者：

HAGIO, M ^{[1
]}

KANAZAWA, K ^{[1
]}

NAMBU, S ^{[1
]}

TOHMORI, S ^{[1
]}

OGATA, S ^{[1
]}

机构：

[1] MATSUSHITA ELECTR CORP,DIV DISCRETE DEVICE,NAGAOKAKYO,KYOTO,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 05期

关键词：

D O I：

10.1109/T-ED.1985.22044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：892 / 895

页数：4

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[2]

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[3] A LOW-NOISE DUAL-GATE GAAS-MESFET FOR UHF TV TUNER [J].

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[4] LONG-TERM AND INSTANTANEOUS BURNOUT IN GAAS POWER FETS - MECHANISMS AND SOLUTIONS [J].

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[5] DETERMINATION OF THRESHOLD FAILURE LEVELS OF SEMICONDUCTOR DIODES AND TRANSISTORS DUE TO PULSE VOLTAGES [J].

WUNSCH, DC ;

BELL, RR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :244-+

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