Anti-reflection Coating of Silicon Nitride Film for Solar Cell by RF Magnetron Sputtering

被引:1
作者
Choi, Kyoon [1 ]
Choi, Eui-Seok [1 ]
Hwang, Jin-Ha [2 ]
Lee, Soo-Hong [3 ]
机构
[1] KICET Icheon Branch Inst, Gyeonggi Do 467843, South Korea
[2] Hongik Univ, Seoul 121791, South Korea
[3] Sejong Univ, Seoul 143747, South Korea
关键词
AR coating (anti-reflection coating); Silicon nitride; Solar cell; RF magnetron sputtering;
D O I
10.4191/kcers.2007.44.1.585
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon nitride films for an anti-reflection coating were deposited on silicon via RF magnetron sputtering using a Si3N4 target. The best result was obtained at the sputtering condition of 340 W RF power, 5 mtorr Ar atmosphere, 100 degrees C substrate temperature. The films showed 7.9% reflectance minimum with 2.35 refractive index, 0.21 absorption coefficient at 66.6 nm thickness. The surface morphology showed a smooth and dense film with good adhesion to silicon surface.
引用
收藏
页码:585 / 588
页数:4
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