RATE OF INTRODUCTION AND CONCENTRATION PROFILE OF A CENTERS IN N-TYPE SILICON IRRADIATED WITH ELECTRONS OF ENERGY CLOSE TO THE DEFECT-FORMATION THRESHOLD

被引：0
作者：
BERMAN, LS
VITOVSKII, NA
VORONKOV, VB
LOMASOV, VN
REMENYUK, AD
TKACHENKO, VN
TOLSTOBROV, MG
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 04期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：475 / 477
页数：3
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