RATE OF INTRODUCTION AND CONCENTRATION PROFILE OF A CENTERS IN N-TYPE SILICON IRRADIATED WITH ELECTRONS OF ENERGY CLOSE TO THE DEFECT-FORMATION THRESHOLD

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作者：

BERMAN, LS

VITOVSKII, NA

VORONKOV, VB

LOMASOV, VN

REMENYUK, AD

TKACHENKO, VN

TOLSTOBROV, MG

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 04期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：475 / 477

页数：3

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