CONNECTION BETWEEN THE MEYER-NELDEL RELATION AND MULTIPLE-TRAPPING TRANSPORT

[1] MEYER-NELDEL RULE IN SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 134 - 135

[2] METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2645 - 2665

[3] Crank J., 1975, MATH DIFFUSION, V2nd

[4] AN INVESTIGATION OF THE CONDUCTIVITY PREFACTOR IN A-SI AS A FUNCTION OF FERMI LEVEL POSITION USING THE FIELD-EFFECT EXPERIMENT [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (01): : 31 - 50

[5] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[6] CREATION OF NEAR-INTERFACE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON SILICON-NITRIDE HETEROJUNCTIONS - THE ROLE OF HYDROGEN [J]. PHYSICAL REVIEW B, 1987, 36 (11): : 6217 - 6220

[7] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (09) : 1037 - 1040

[8] Kohlrausch R., 1847, ANN PHYS-LEIPZIG, V12, P393, DOI [10.1002/andp.18471481102, DOI 10.1002/ANDP.18471481102]

[9] HOLE CARRIER DRIFT-MOBILITY MEASUREMENTS IN A-SI-H, AND THE SHAPE OF THE VALENCE-BAND TAIL [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (03): : 387 - 397

[10] CARRIER DIFFUSION IN AMORPHOUS-SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1983, 46 (10) : 1235 - 1282

[1] MEYER-NELDEL RULE IN SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 134 - 135

[2] METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2645 - 2665

[3] Crank J., 1975, MATH DIFFUSION, V2nd

[4] AN INVESTIGATION OF THE CONDUCTIVITY PREFACTOR IN A-SI AS A FUNCTION OF FERMI LEVEL POSITION USING THE FIELD-EFFECT EXPERIMENT [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (01): : 31 - 50

[5] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[6] CREATION OF NEAR-INTERFACE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON SILICON-NITRIDE HETEROJUNCTIONS - THE ROLE OF HYDROGEN [J]. PHYSICAL REVIEW B, 1987, 36 (11): : 6217 - 6220

[7] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (09) : 1037 - 1040

[8] Kohlrausch R., 1847, ANN PHYS-LEIPZIG, V12, P393, DOI [10.1002/andp.18471481102, DOI 10.1002/ANDP.18471481102]

[9] HOLE CARRIER DRIFT-MOBILITY MEASUREMENTS IN A-SI-H, AND THE SHAPE OF THE VALENCE-BAND TAIL [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (03): : 387 - 397

[10] CARRIER DIFFUSION IN AMORPHOUS-SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1983, 46 (10) : 1235 - 1282