ALIGNMENT ACCURACY OF FOCUSED ION-BEAM IMPLANTATION

被引:2
作者
MORITA, T
ARIMOTO, H
MIYAUCHI, E
HASHIMOTO, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 06期
关键词
D O I
10.1143/JJAP.26.955
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:955 / 958
页数:4
相关论文
共 10 条
[1]   A 100-KV ION PROBE MICROFABRICATION SYSTEM WITH A TETRODE GUN [J].
CLEAVER, JRA ;
AHMED, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1145-1148
[3]   SCANNING MICROBEAM USING A LIQUID-METAL ION-SOURCE [J].
ISHITANI, T ;
TAMURA, H ;
TODOKORO, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01) :80-83
[4]   FET FABRICATION USING MASKLESS ION-IMPLANTATION [J].
KUBENA, RL ;
ANDERSON, CL ;
SELIGER, RL ;
JULLENS, RA ;
STEVENS, EH ;
LAGNADO, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :916-920
[5]   SELECTIVE SI AND BE IMPLANTATION IN GAAS USING A 100 KV MASS-SEPARATING FOCUSED ION-BEAM SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE [J].
MIYAUCHI, E ;
ARIMOTO, H ;
HASHIMOTO, H ;
UTSUMI, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1113-1116
[6]   COMPUTER CONTROL OF MASKLESS ION IMPLANTER WITH AU-SI-BE LM ION-SOURCE FOR III-V COMPOUND SEMICONDUCTORS [J].
MIYAUCHI, E ;
ARIMOTO, H ;
BAMBA, Y ;
TAKAMORI, A ;
HASHIMOTO, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :183-189
[7]   DETECTION OF ALIGNMENT SIGNALS FOR FOCUSED ION-BEAM LITHOGRAPHY [J].
MORIMOTO, H ;
SASAKI, Y ;
ONODA, H ;
KATO, T .
APPLIED PHYSICS LETTERS, 1985, 46 (09) :898-900
[8]   GEOMETRICAL DESIGN OF AN ALIGNMENT MARK FOR MASKLESS ION-IMPLANTATION IN GAAS [J].
MORITA, T ;
MIYAUCHI, E ;
ARIMOTO, H ;
TAKAMORI, A ;
BAMBA, Y ;
HASHIMOTO, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :829-832
[9]   GEOMETRICAL DESIGN OF AN ALIGNMENT MARK FOR FOCUSED ION-BEAM IMPLANTATION IN GAAS USING MONTE-CARLO SIMULATION OF ION TRAJECTORIES [J].
MORITA, T ;
MIYAUCHI, E ;
ARIMOTO, H ;
TAKAMORI, A ;
BAMBA, Y ;
HASHIMOTO, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :236-240
[10]   GAAS GROWTH USING AN MBE SYSTEM CONNECTED WITH A 100 KV UHV MASKLESS ION IMPLANTER [J].
TAKAMORI, A ;
MIYAUCHI, E ;
ARIMOTO, H ;
BAMBA, Y ;
HASHIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L599-L601