EVALUATION OF SPACE-CHARGE-LIMITED CURRENTS IN A-SI-H/C-SI HETEROJUNCTION

被引：6

作者：

SCHAUER, F ^{[1
]}

SMID, V ^{[1
]}

ZMESKAL, O ^{[1
]}

STOURAC, L ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 2, CZECHOSLOVAKIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1982年 / 73卷 / 02期

关键词：

D O I：

10.1002/pssa.2210730255

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K199 / K203

页数：5

共 15 条

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[2] DLTS STUDY OF THE GAP STATES OF AMORPHOUS SI1-XHX ALLOYS
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[4] TRANSPORT PROPERTIES OF GLASS-SILICON HETEROJUNCTIONS
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1010 - 1014
[5] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H
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[6] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165
[7] ELECTRONIC DENSITY OF STATES IN DISCHARGE-PRODUCED AMORPHOUS SILICON
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[8] Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
[9] PHOTOELECTRIC PROPERTIES OF CHALCOGENIDE GLASS THIN-FILM HETEROSTRUCTURES
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[J]. THIN SOLID FILMS, 1976, 34 (01) : 51 - 53
[10] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
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SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257

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