THE CONTRIBUTION OF ION-BEAM TECHNIQUES TO THE PHYSICS AND TECHNOLOGY OF AMORPHOUS-SEMICONDUCTORS

For more than two decades ion-beam techniques have successfully been used to address central issues in the physics of amorphous semiconductor materials. The results of these investigations are becoming useful for diverse areas of application ranging from the fabrication of large-area opto-electronic devices to the production of sub-mum optical patterns for lithography and data storage.