EFFECT OF TEMPERATURE ON EXCITON TRAPPING ON INTERFACE DEFECTS IN GAAS QUANTUM WELLS

被引：92
作者：
DELALANDE, C
MEYNADIER, MH
VOOS, M
机构：
来源：
PHYSICAL REVIEW B | 1985年 / 31卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.31.2497
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：2497 / 2498
页数：2
相关论文
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