LASER-INDUCED DECOMPOSITION OF TRIETHYLGALLIUM AND TRIMETHYLGALLIUM ADSORBED ON GAAS(100)

被引：73
作者：
MCCAULLEY, JA [1 ]
MCCRARY, VR [1 ]
DONNELLY, VM [1 ]
机构：
[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
来源：
JOURNAL OF PHYSICAL CHEMISTRY | 1989年 / 93卷 / 03期
关键词：
D O I：
10.1021/j100340a026
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：1148 / 1158
页数：11
相关论文
共 65 条
[1]   ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES [J].
AMITH, A ;
KUDMAN, I ;
STEIGMEIER, EF .
PHYSICAL REVIEW, 1965, 138 (4A) :1270-+
[2]  
Baeri P., 1982, Laser annealing of semiconductors, P75
[3]   ULTRAVIOLET INDUCED METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS [J].
BALK, P ;
HEINECKE, H ;
PUTZ, N ;
PLASS, C ;
LUTH, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :711-715
[4]   ULTRAVIOLET-ASSISTED GROWTH OF GAAS [J].
BALK, P ;
FISCHER, M ;
GRUNDMANN, D ;
LUCKERATH, R ;
LUTH, H ;
RICHTER, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1453-1459
[5]   EMPIRICAL-METHODS FOR DETERMINATION OF IONIZATION GAUGE RELATIVE SENSITIVITIES FOR DIFFERENT GASES [J].
BARTMESS, JE ;
GEORGIADIS, RM .
VACUUM, 1983, 33 (03) :149-153
[6]   LASER SURFACE-ADSORBATE INTERACTIONS - THERMAL VERSUS PHOTOELECTRONIC EXCITATION OF MO(CO)6 ON SI(111) [J].
BARTOSCH, CE ;
GLUCK, NS ;
HO, W ;
YING, Z .
PHYSICAL REVIEW LETTERS, 1986, 57 (12) :1425-1428
[7]  
BERTNESS KA, 1987, PHOTON BEAM PLASMA S, V75, P575
[8]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[9]   UV PHOTODISSOCIATION AND PHOTODESORPTION OF ADSORBED MOLECULES .1. CH3BR ON LIF(001) [J].
BOURDON, EBD ;
COWIN, JP ;
HARRISON, I ;
POLANYI, JC ;
SEGNER, J ;
STANNERS, CD ;
YOUNG, PA .
JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (25) :6100-6103
[10]  
CARDONA M, 1960, 1960 INT C SEM PHYS, P388
1234567