HETEROEPITAXIAL GROWTH OF HIGH MOBILITY INASP FROM THE VAPOR-PHASE

被引：13

作者：

WANG, PJ ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 08期

关键词：

D O I：

10.1063/1.94910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：766 / 768

页数：3

共 10 条

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[8] VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS-INASP HETEROJUNCTIONS FOR LONG WAVELENGTH TRANSFERRED ELECTRON PHOTO-CATHODES [J].

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[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL INAS1-XPX USING ARSINE AND PHOSPHINE [J].

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