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HETEROEPITAXIAL GROWTH OF HIGH MOBILITY INASP FROM THE VAPOR-PHASE
被引:13
作者
:
WANG, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
WANG, PJ
[
1
]
WESSELS, BW
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
WESSELS, BW
[
1
]
机构
:
[1]
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
来源
:
APPLIED PHYSICS LETTERS
|
1984年
/ 44卷
/ 08期
关键词
:
D O I
:
10.1063/1.94910
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:766 / 768
页数:3
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DEPOSITION OF EPITAXIAL INASXP(1-X) ON GAAS AND GAP SUBSTRATES
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ALLEN, HA
MEHAL, EW
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MEHAL, EW
[J].
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[2]
GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX
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ANTYPAS, GA
YEP, TO
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YEP, TO
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
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: 3201
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[3]
ELECTRON MOBILITY OF INDIUM ARSENIDE PHOSPHIDE [IN(ASYP1-Y)]
EHRENREICH, H
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EHRENREICH, H
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
12
(01)
: 97
-
104
[4]
FAIRMAN RD, 1977, I PHYS C SER B, V33
[5]
GROWTH AND CHARACTERIZATION OF INGAASP LATTICE-MATCHED TO INP
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论文数:
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COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y
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QUILLEC H, 1983, APPL PHYS LETT, V42, P886
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NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
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[J].
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1983,
64
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157
[10]
PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL INAS1-XPX USING ARSINE AND PHOSPHINE
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
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: 492
-
&
←
1
→
共 10 条
[1]
DEPOSITION OF EPITAXIAL INASXP(1-X) ON GAAS AND GAP SUBSTRATES
ALLEN, HA
论文数:
0
引用数:
0
h-index:
0
ALLEN, HA
MEHAL, EW
论文数:
0
引用数:
0
h-index:
0
MEHAL, EW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(08)
: 1081
-
&
[2]
GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
YEP, TO
论文数:
0
引用数:
0
h-index:
0
YEP, TO
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(08)
: 3201
-
&
[3]
ELECTRON MOBILITY OF INDIUM ARSENIDE PHOSPHIDE [IN(ASYP1-Y)]
EHRENREICH, H
论文数:
0
引用数:
0
h-index:
0
EHRENREICH, H
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
12
(01)
: 97
-
104
[4]
FAIRMAN RD, 1977, I PHYS C SER B, V33
[5]
GROWTH AND CHARACTERIZATION OF INGAASP LATTICE-MATCHED TO INP
HOUSTON, PA
论文数:
0
引用数:
0
h-index:
0
HOUSTON, PA
[J].
JOURNAL OF MATERIALS SCIENCE,
1981,
16
(11)
: 2935
-
2961
[6]
COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y
LEHENY, RF
论文数:
0
引用数:
0
h-index:
0
LEHENY, RF
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
BALLMAN, AA
DEWINTER, JC
论文数:
0
引用数:
0
h-index:
0
DEWINTER, JC
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(03)
: 561
-
568
[7]
QUILLEC H, 1983, APPL PHYS LETT, V42, P886
[8]
VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS-INASP HETEROJUNCTIONS FOR LONG WAVELENGTH TRANSFERRED ELECTRON PHOTO-CATHODES
SAXENA, RR
论文数:
0
引用数:
0
h-index:
0
SAXENA, RR
HYDER, SB
论文数:
0
引用数:
0
h-index:
0
HYDER, SB
GREGORY, PE
论文数:
0
引用数:
0
h-index:
0
GREGORY, PE
ESCHER, JS
论文数:
0
引用数:
0
h-index:
0
ESCHER, JS
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
50
(02)
: 481
-
484
[9]
DEFECT CENTERS IN HIGH-PURITY HYDRIDE VPE INDIUM-PHOSPHIDE
SUN, SW
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
SUN, SW
CONSTANT, AP
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
CONSTANT, AP
ADAMS, CD
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
ADAMS, CD
WESSELS, BW
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
WESSELS, BW
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
64
(01)
: 149
-
157
[10]
PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL INAS1-XPX USING ARSINE AND PHOSPHINE
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
TIETJEN, JJ
MARUSKA, HP
论文数:
0
引用数:
0
h-index:
0
MARUSKA, HP
CLOUGH, RB
论文数:
0
引用数:
0
h-index:
0
CLOUGH, RB
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(04)
: 492
-
&
←
1
→