DC OPERATED THIN-FILM ELECTROLUMINESCENT DEVICE

被引：0

作者：

TSAKONAS, C

THOMAS, CB

机构：

[1] Department of Electronic and Electrical Engineering, Bradford University, Bradford BD7 1DP, Ritchmond Road

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 14期

关键词：

ELECTROLUMINESCENCE; ELECTROLUMINESCENT DEVICES; THIN FILM DEVICES;

D O I：

10.1049/el:19950767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved version of a DC operated thin film electroluminescent device is proposed, which relies heavily on the nature of trapping stales in a p(-)-Si/ZnS:Mn heterodiode. Such a junction facilitates charge leakage from the inversion region of the silicon when films of ZnS are: grown by sputtering in a sulphur-reduced environment. Alternatively, high resistivity films of ZnS are created by growth in a sulphur-enriched environment. Hence, the proposed structure is reverse biased p(-)-Si/ZnS(grown in Ar/O)/Y2O3/ZnS:Mn(grown in Ar/H2S) and has a transparent electrode. The thin film of Y2O3 prevents diffusion of sulphur vacancies while facilitating electron tunnelling.

引用

页码：1193 / 1195

页数：3

共 7 条

[1] DC ELECTROLUMINESCENCE IN COPPER-FREE ZNS-MN THIN-FILMS .1. LOCAL DESTRUCTIVE BREAKDOWN AND ITS DEPENDENCE ON PREPARATION AND TEST CONDITIONS [J].