DC AND RF CHARACTERISTICS OF INALAS/INGAAS DUAL-GATE TEGFETS

被引：3

作者：

GUEISSAZ, F

HOUDRE, R

ILEGEMS, M

机构：

[1] Institut de Micro- et Optoélectronique, Ecole Polytechnique Fédérate

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 08期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; MICROWAVE DEVICES AND COMPONENTS;

D O I：

10.1049/el:19910396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DC and microwave measurements on 0.7-mu-m single-gate (SG) and dual-gate (DG) In0.52Al0.48As/In0.53Ga0.47As planar doped two-dimensional electron gas field-effect transistors (TEGFETs) are reported. The DG devices show a large increase of the g(m) to g(D) ratios, which are as high as 100 at g(m) = 380 mS/mm, compared with 12 at 420 mS/mm for the single gate (SG) devices on the same chip, as well as 6 dB improvement in the RF power gain compared with their SG counterparts.

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页码：631 / 632

页数：2

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