PHOTOENHANCED OXIDATION OF GALLIUM-ARSENIDE

被引：2
作者：
BERMUDEZ, VM
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1984年 / 2卷 / 02期
关键词：
D O I：
10.1116/1.572454
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：598 / 599
页数：2
相关论文
共 19 条
  • [1] OXYGEN AND HYDROGEN ADSORPTION ON GAAS(110)
    BARTELS, F
    SURKAMP, L
    CLEMENS, HJ
    MONCH, W
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 756 - 762
  • [2] OXIDATION OF SILICON SURFACES BY CO2-LASERS
    BOYD, IW
    WILSON, JIB
    [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 162 - 164
  • [3] LASER-INDUCED OXIDATION OF SILICON
    BOYD, IW
    WILSON, JIB
    WEST, JL
    [J]. THIN SOLID FILMS, 1981, 83 (04) : L173 - L176
  • [4] LASER-ENHANCED OXIDATION OF SI
    BOYD, IW
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 728 - 730
  • [5] PHOTOCHEMICAL OXIDATION OF (HG,CD)TE
    BUCHNER, SP
    DAVIS, GD
    BYER, NE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 446 - 447
  • [6] LASER-INDUCED OXIDATION OF THE SI(111) SURFACE
    CROS, A
    SALVAN, F
    DERRIEN, J
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (04): : 241 - 245
  • [7] IN-DEPTH OXYGEN CONTAMINATION PRODUCED IN SILICON BY PULSED LASER IRRADIATION
    GARULLI, A
    SERVIDORI, M
    VECCHI, I
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (10) : L199 - &
  • [8] INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION
    HOH, K
    KOYAMA, H
    UDA, K
    MIURA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L375 - L378
  • [9] LASER OXIDATION OF GAAS
    MATSUURA, M
    ISHIDA, M
    SUZUKI, A
    HARA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) : L726 - L728
  • [10] UV-OZONE CLEANING OF GAAS FOR MBE
    MCCLINTOCK, JA
    WILSON, RA
    BYER, NE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 241 - 242
12