DEFECTS AT THE SI/SIO2 INTERFACE OF SIO2 PRECIPITATES IN SILICON

被引：0
|
作者：
HOBBS, A [1 ]
BARKLIE, RC [1 ]
REESON, K [1 ]
HEMMENT, PLF [1 ]
机构：
[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
来源：
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE | 1987年 / 151卷
关键词：
D O I：
10.1524/zpch.1987.151.Part_1_2.251
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：251 / 257
页数：7
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