共 24 条
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THEORY OF VALENCE-BAND AUGER LINE-SHAPES - IDEAL SI(111), (100), AND (110)
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SILICIDE INTERFACE STOICHIOMETRY
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 18 (03)
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LOW-TEMPERATURE REACTIONS AT SI-METAL CONTACTS - FROM SIO2 GROWTH DUE TO SI-AU REACTION TO THE MECHANISM OF SILICIDE FORMATION
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
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CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1979, 16 (05)
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ELECTRONIC-STRUCTURE OF A PD MONOLAYER ON AN SI(111) SURFACE
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PHYSICAL REVIEW B,
1980, 22 (10)
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