GRAIN-GROWTH AND CONDUCTIVE CHARACTERISTICS OF SUPER THIN POLYSILICON FILMS BY OXIDATION

被引：9

作者：

NOGUCHI, T

HAYASHI, H

OHSHIMA, T

机构：

[1] Sony Corp, Semiconductor Group,, Atsugi, Jpn, Sony Corp, Semiconductor Group, Atsugi, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 06期

关键词：

D O I：

10.1143/JJAP.24.L434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L434 / L436

页数：3

共 6 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] POLYSILICON SUPER-THIN-FILM TRANSISTOR (SFT) [J].

HAYASHI, H ;

NOGUCHI, T ;

OSHIMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11) :L819-L820

[3] GLOW-DISCHARGE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

HIRAI, Y ;

OSADA, Y ;

KOMATSU, T ;

OMATA, S ;

AIHARA, K ;

NAKAGIRI, T .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :701-703

[4] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[5] OPTICAL INVESTIGATION OF DIFFERENT SILICON FILMS [J].

KUHL, C ;

SCHLOTTERER, H ;

SCHWIDEFSKY, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) :1496-1500

[6] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254

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