PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL

被引：124

作者：

GILESTAYLOR, NC

BICKNELL, RN

BLANKS, DK

MYERS, TH

SCHETZINA, JF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.573250

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：76 / 82

页数：7

共 19 条

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[2] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

YANKA, RW ;

GILES, NC ;

SCHETZINA, JF ;

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LEUNG, C ;

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APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315

[3] ELECTROREFLECTANCE STUDIES IN CD1-XMNXTE SOLID-SOLUTIONS [J].

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[4]

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[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].

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YOUNG, IM .

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[6]

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[7] DILUTED MAGNETIC SEMICONDUCTORS - AN INTERFACE OF SEMICONDUCTOR PHYSICS AND MAGNETISM [J].

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[8] ELECTRICAL, OPTICAL, AND MAGNETIC-PROPERTIES OF HG1-XMNXTE [J].

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[9]

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[10]

Galazka R. R., 1980, Narrow Gap Semiconductors, Physics and Applications. Proceedings of the International Summer School on Narrow Gap Semiconductors, Physics and Applications, P245

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