OPTICAL-PROPERTIES OF DISLOCATIONS IN GERMANIUM-CRYSTALS

被引：0

作者：

LELIKOV, YS

REBANE, YT

SHRETER, YG

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 104期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A sharp line in the photoluminescence (PL) of Ge with grown-in dislocations is observed. The line is interpreted as being due to the 1d-dislocation exciton (DE). The binding energy of the DE is determined as double-similar 3 meV and its theoretical estimation is made. The series of lines in the PL spectra of the Ge and Si crystals with non-equilibrium dislocations are explained. The kinetics and the mechanisms of the carrier recombination are analysed.

引用

页码：119 / 129

页数：11

共 21 条

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