INFLUENCE OF NEUTRON-IRRADIATION AND ANNEALING ON THE PROPERTIES OF GERMANIUM-DOPED SILICON

被引：0

作者：

ITALYANTSEV, AG

KURBAKOV, AI

MORDKOVICH, VN

RUBINOVA, EE

TEMPER, EM

TRUNOV, VA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 05期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：526 / 529

页数：4

共 11 条

[1]

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[2]

BOLDYREV SN, 1985, ELEKTRON TEKH SER, V2, P39

[3]

Gorbacheva N. I., 1986, Soviet Physics - Crystallography, V31, P591

[4]

KHIRUNENKO LI, 1987, SOV PHYS SEMICOND+, V21, P345

[5] FAST-NEUTRON RADIATION DAMAGES IN HEAVILY DOPED P-SILICON [J].

LITVINOV, VL ;

UKHIN, NA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 89 (01) :95-104

[6]

MATVEEV YA, 1980, SOV PHYS SEMICOND+, V14, P841

[7]

MORDKOVICH VN, 1980, SOV PHYS SEMICOND+, V14, P1288

[8]

NOVIKOV SR, 1975, SOV PHYS SEMICOND+, V9, P352

[9]

SMIRNOV LS, 1977, PHYSICAL PROCESSES I

[10]

TITOV VV, 1983, IAE377411 KURCH I AT