SPOT PROFILE ANALYSIS (LEED) OF DEFECTS AT SILICON SURFACES

被引：31
作者：
HENZLER, M
机构：
来源：
SURFACE SCIENCE | 1983年 / 132卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(83)90533-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：82 / 91
页数：10
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