INFLUENCE OF BEVEL ANGLE AND SURFACE CHARGE ON BREAKDOWN VOLTAGE OF NEGATIVELY BEVELED DIFFUSED P-N-JUNCTIONS

被引：17
作者：
BAKOWSKI, M [1 ]
HANSSON, B [1 ]
机构：
[1] CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN
来源：
SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 7-8期
关键词：
D O I：
10.1016/0038-1101(75)90136-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：651 / &
相关论文
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[1]   DEPLETION LAYER CHARACTERISTICS AT SURFACE OF BEVELED HIGH-VOLTAGE P-N-JUNCTIONS [J].
BAKOWSKI, M ;
LUNDSTROM, KI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (06) :550-563
[2]   DETERMINATION OF DOPING PROFILE OF A THYRISTOR FROM C-V MEASUREMENTS [J].
BAKOWSKI, M ;
BOLANDER, G ;
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INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 35 (05) :641-653
[3]   FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES [J].
CORNU, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :347-352
[4]   MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS [J].
VANOVERSTRAETEN, R ;
DEMAN, H .
SOLID-STATE ELECTRONICS, 1970, 13 (05) :583-+
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