Radiation Effects in Carbon Nanoelectronics

被引：35

作者：

Cress, Cory D. ^{[1
]}

McMorrow, Julian J. ^{[2
]}

Robinson, Jeremy T. ^{[1
]}

Landi, Brian J. ^{[3
]}

Hubbard, Seth M. ^{[4
]}

Messenger, Scott R. ^{[1
]}

机构：

[1] US Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA

[2] North Amer Inc, Global Strategies Grp, Crofton, MD 21114 USA

[3] Rochester Inst Technol, Chem & Biomed Engn Dept, Rochester, NY 14623 USA

[4] Rochester Inst Technol, Phys Dept, Rochester, NY 14623 USA

来源：

ELECTRONICS | 2012年 / 1卷 / 01期

关键词：

single walled carbon nanotubes; graphene; total ionizing dose; TID; radiation hardening; FET; SWCNT; carbon nanoelectronics;

D O I：

10.3390/electronics1010023

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices.

引用

页码：23 / 31

页数：9

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