ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING

被引：63

作者：

KUNO, HJ

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1964.15272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：8 / &

共 9 条

[1] MINORITY CARRIER LIFETIME IN P-N JUNCTION DEVICES [J].

BYCZKOWSKI, M ;

MADIGAN, JR .

[2] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].

KINGSTON, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05) :829-834

[3]

KO WH, 1961, IRE T ELECTRON DEVIC, VED 8, P123

[4]

LECAN C, 1962, JUNCTION TRANSISTOR

[5]

Moll J. L., 1962, P IRE, V50, P43

[6]

MUTO SY, 1962, IRE T, VED 9, P183

[7] CHARGE STORAGE IN JUNCTION DIODES [J].

STEELE, EL .

[8]

VALDES LB, 1961, PHYSICAL THEORY TRAN

[9]

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