COHERENT TUNNELING AND VOLTAGE AMPLIFICATION

被引：0
作者：
NAGAE, M [1 ]
机构：
[1] NATL DEF ACAD,DEPT MATH & PHYS,YOKOSUKA,KANAGAWA 239,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 04期
关键词：
TRANSPORT PROPERTIES; TUNNELING; METAL-INSULATOR-METAL JUNCTION; EMF; VOLTAGE AMPLIFICATION;
D O I：
10.1143/JJAP.30.697
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We analyze the flow of electrons injected continuously into one metal side of a specially biased metal-insulator-metal tunnel junction, where this metal part has a sufficiently long mean free path. These injected electrons are energetic and yield an electric double layer at the end of this metal region on the insulator side. Then, an appreciable amount of voltage difference (some type of emf) appears across both ends of this metal layer. From results of calculations, we discuss the possibility of such a phenomenon.
引用
收藏
页码：697 / 702
页数：6
相关论文
共 50 条
[41]   Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current [J].
Guo, Peng-Fei ;
Yang, Li-Tao ;
Yang, Yue ;
Fan, Lu ;
Han, Gen-Quan ;
Samudra, Ganesh S. ;
Yeo, Yee-Chia .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (09) :981-983
[42]   Silicon Tunneling Field-Effect Transistors With Tunneling in Line With the Gate Field [J].
Fischer, Inga A. ;
Bakibillah, A. S. M. ;
Golve, Murali ;
Haehnel, Daniel ;
Isemann, Heike ;
Kottantharayil, Anil ;
Oehme, Michael ;
Schulze, Joerg .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) :154-156
[43]   Tunneling barrier reduction and asymmetry in scanning tunneling microscope due to dynamical screening [J].
Sestovic, D ;
Sunjic, M .
SOLID STATE COMMUNICATIONS, 1996, 98 (05) :375-378
[44]   Resonant electron tunneling through azurin in air and liquid by scanning tunneling microscopy [J].
Frascerra, V ;
Calabi, F ;
Maruccio, G ;
Pornpa, PP ;
Cingolani, R ;
Rinaldi, R .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (05) :637-640
[45]   Tunneling Intensity Enhancement of Resonant Tunneling Effects Caused by Surface Plasmon Excitations [J].
Peng-Hsiao Lee ;
Yung-Chiang Lan .
Plasmonics, 2010, 5 :183-187
[46]   Transient tunneling spectroscopy (TTS) study of electron tunneling from phosphorus atoms in silicon [J].
Dargys, A. ;
Zurauskas, S. ;
Zurauskiene, N. .
Applied Physics A: Solids and Surfaces, 1991, 52 (01) :13-18
[47]   Study on tunneling magnetoresistance effects in parabolic well magnetic tunneling junction with double barriers [J].
Huang Zheng ;
Long Chao-Yun ;
Zhou Xun ;
Xu Ming .
ACTA PHYSICA SINICA, 2016, 65 (15)
[48]   Updating the decision aids for tunneling [J].
Haas, C ;
Einstein, HH .
JOURNAL OF CONSTRUCTION ENGINEERING AND MANAGEMENT-ASCE, 2002, 128 (01) :40-48
[49]   Tunneling features in semiconductor nanostructures [J].
Arseev, P. I. ;
Mantsevich, V. N. ;
Maslova, N. S. ;
Panov, V. I. .
PHYSICS-USPEKHI, 2017, 60 (11) :1067-1086
[50]   RAPID TUNNELING AND PERCOLATION IN THE LANDSCAPE [J].
Sarangi, Saswat ;
Shiu, Gary ;
Shlaer, Benjamin .
INTERNATIONAL JOURNAL OF MODERN PHYSICS A, 2009, 24 (04) :741-788
12345