COHERENT TUNNELING AND VOLTAGE AMPLIFICATION

被引：0

作者：

NAGAE, M ^{[1
]}

机构：

[1] NATL DEF ACAD,DEPT MATH & PHYS,YOKOSUKA,KANAGAWA 239,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 04期

关键词：

TRANSPORT PROPERTIES; TUNNELING; METAL-INSULATOR-METAL JUNCTION; EMF; VOLTAGE AMPLIFICATION;

D O I：

10.1143/JJAP.30.697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze the flow of electrons injected continuously into one metal side of a specially biased metal-insulator-metal tunnel junction, where this metal part has a sufficiently long mean free path. These injected electrons are energetic and yield an electric double layer at the end of this metal region on the insulator side. Then, an appreciable amount of voltage difference (some type of emf) appears across both ends of this metal layer. From results of calculations, we discuss the possibility of such a phenomenon.

引用

页码：697 / 702

页数：6

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