THERMAL-STABILITY OF THE AL/PDXW100-X/SI CONTACT SYSTEMS

被引：6

作者：

EIZENBERG, M ^{[1
]}

THOMPSON, RD ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.335992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1886 / 1892

页数：7

共 23 条

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[2]

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[3] FORMATION OF SHALLOW SILICIDE CONTACTS OF HIGH SCHOTTKY-BARRIER ON SI - ALLOYING PD AND PT WITH W VS ALLOYING PD AND PT WITH SI [J].

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[4]

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KOSTER, U .

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[8] THERMAL-REACTIONS BETWEEN ALUMINUM AND PALLADIUM LAYERED FILMS [J].

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RON, M .

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[9]

KOSTER U, 1982, J APPL PHYS, V53, P7436, DOI 10.1063/1.330113

[10] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

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