LOW HYDROGEN CONTENT SILICON-NITRIDE DEPOSITED AT LOW-TEMPERATURE BY NOVEL REMOTE PLASMA TECHNIQUE

被引:53
作者
HATTANGADY, SV
FOUNTAIN, GG
RUDDER, RA
MARKUNAS, RJ
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.575891
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:570 / 575
页数:6
相关论文
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