DEPENDENCE OF THRESHOLD CURRENTS ON IMPURITY CONCENTRATIONS IN LASER DIODES

被引：3

作者：

NANNICHI, Y

机构：

来源：

关键词：

D O I：

10.1063/1.1714347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1499 / &

共 8 条

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[2]

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[4] THRESHOLD CURRENTS FOR LINE NARROWING IN GAAS JUNCTION DIODES [J].

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[5] DEPENDENCE OF RECOMBINATION RADIATION ON CURRENT IN CAAS DIODES [J].

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BLACK, J .

NELSON, H ;

DOUSMANIS, GC .

[7] ABSORPTION DATA OF LASER-TYPE GAAS AT 300 DEGREES + 77 DEGREES K [J].

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REESE, WE .

WINOGRADOFF, NN ;

KESSLER, HK .