SILICON DIOXIDE REACTIVE ION ETCHING DEPENDENCE ON SHEATH VOLTAGE

被引：17
|
作者：
FORTUNO, G
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期
关键词：
D O I：
10.1116/1.573841
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：744 / 747
页数：4
相关论文
共 50 条
  • [21] ION-BEAM ETCHING OF SILICON DIOXIDE ON SILICON
    MADER, L
    HOEPFNER, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1893 - 1898
  • [22] Interference of the Luminescent Glow of Silicon Dioxide during Reactive Ion-Plasma Etching**
    A. V. Abramov
    E. A. Pankratova
    I. S. Surovtsev
    Journal of Applied Spectroscopy, 2020, 87 : 208 - 211
  • [23] ELECTRICAL CHARACTERIZATION OF SILICON SURFACE AFTER REACTIVE ION ETCHING OF SILICON DIOXIDE BY CHF3
    TONG, KY
    YIP, KW
    FUNG, WM
    MICROELECTRONICS AND RELIABILITY, 1990, 30 (06): : 1111 - 1116
  • [24] Interference of the Luminescent Glow of Silicon Dioxide during Reactive Ion-Plasma Etching*
    Abramov, A., V
    Pankratova, E. A.
    Surovtsev, I. S.
    JOURNAL OF APPLIED SPECTROSCOPY, 2020, 87 (02) : 208 - 211
  • [25] EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA
    EPHRATH, LM
    JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) : 415 - 428
  • [26] Reactive ion etching of glasses: Composition dependence
    Metwalli, E
    Pantano, CG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 207 (01): : 21 - 27
  • [27] Dependence of silicon fracture strength and surface morphology on deep reactive ion etching parameters
    Chen, KS
    Ayon, AA
    Lohner, KA
    Kepets, MA
    Melconian, TK
    Spearing, SM
    MATERIALS SCIENCE OF MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES, 1999, 546 : 21 - 26
  • [28] DAMAGE TO THE SILICON LATTICE BY REACTIVE ION ETCHING
    STRUNK, HP
    CERVA, H
    MOHR, EG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (11) : 2876 - 2880
  • [29] A survey on the reactive ion etching of silicon in microtechnology
    Jansen, H
    Gardeniers, H
    deBoer, M
    Elwenspoek, M
    Fluitman, J
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1996, 6 (01) : 14 - 28
  • [30] DAMAGE IN SILICON AFTER REACTIVE ION ETCHING
    STRUNK, HP
    CERVA, H
    MOHR, EG
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 457 - 462
12345