HALOFLUOROCARBON PLASMA TREATMENTS OF POLYSTYRENE AND POLY(METHYL METHACRYLATE) SURFACES

The effect of halofluorocarbon (CF4, CF3CL, CF3Br) discharges on polystyrene (PS) and poly(methyl methacrylate) (PMMA) has been studied. It has been shown that, depending on the halogen/halocarbon radical ratio, polymerization or etching can occur. The discharge chemistry has been altered by changing the excitation electrode material, and thus enhancing or depressing the amount of halocarbon radicals in the discharge. In CF3Br and CF3Cl plasma, mass spectroscopy revealed the formation of molecular chlorine and bromine. Ion bombardment has been shown, in both PS and PMMA, to enhance etch rates and to depress the deposition of plasma polymer.