SYNTHESIS AND CHARACTERIZATION OF LITAO3 THIN-FILMS DEPOSITED ON SI BY THE SOL-GEL METHOD

被引：14

作者：

RETUERT, PJ ^{[1
]}

KNEUER, PG ^{[1
]}

WITTKE, O ^{[1
]}

AVILA, RE ^{[1
]}

PIDERIT, GJ ^{[1
]}

机构：

[1] COMIS CHILEAN ENERGIA NUCL,SANTIAGO,CHILE

来源：

JOURNAL OF MATERIALS RESEARCH | 1995年 / 10卷 / 11期

关键词：

D O I：

10.1557/JMR.1995.2797

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline LiTaO3 (LT) thin films have been prepared on (001)Si substrates by the sol-gel method. A Li-Ta double alkoxide prepared from lithium methoxide and tantalum ethoxide precursors was spin coated on Si and heated up to 950 degrees C. The dependence of the film quality upon the process variables, alkoxide concentration before hydrolysis, the water to double alkoxide ratio, and the final double alkoxide concentration, has been established. Preferential alignment of the (104) LT planes was observed parallel to the (100)Si surface. Most films present resistivities of the order of 30 k Omega . cm and breakdown field in excess of 200 kV/cm.

引用

页码：2797 / 2800

页数：4

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