SIO2 FILM GROWTH BY ARF LASER PHOTOLYSIS OF SIH4/N2O MIXTURES

被引：14

作者：

TSUJI, M

SAKUMOTO, M

ITOH, N

OBASE, H

NISHIMURA, Y

机构：

[1] TOHWA COLL,FAC ENGN,DEPT IND CHEM,MINAMI KU,FUKUOKA 815,JAPAN

[2] KYUSHU UNIV,GRAD SCH ENGN SCI,DEPT MOLEC SCI & TECHNOL,KASUGA,FUKUOKA 816,JAPAN

[3] KYUSHU NEC CORP,KUMAMOTO 86141,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1991年 / 51卷 / 3-4期

关键词：

D O I：

10.1016/0169-4332(91)90399-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Growth of SiO2 thin films has been investigated by the ArF excimer laser photolysis of mixtures of SiH4 and N2O at low substrate temperatures of 30-500-degrees-C. The structural properties of the SiO2 layers were studied by FT-IR spectroscopy. The refractive index of the films was 1.46 in the substrate temperature range of 200-500-degrees-C. It was found that the growth rate depended on the substrate temperature, the total pressure, and the N2O/SiH4 flow ratio. The maximum growth rate was approximately 100 angstrom/min at a substrate temperature of 500-degrees-C, a total pressure of 2 Torr, and a N2O/SiH4 flow ratio of 800.

引用

页码：171 / 176

页数：6

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